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NTP75N03L09, NTB75N03L09
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ?Source Breakdown Voltage (Note 2)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Negative)
V (BR)DSS
30
34
?57
?
?
Vdc
mV ° C
Zero Gate Voltage Drain Current
I DSS
m Adc
(V DS = 30 Vdc, V GS = 0 Vdc)
(V DS = 30 Vdc, V GS = 0 Vdc, T J = 150 ° C)
?
?
?
?
1.0
10
Gate?Body Leakage Current
(V GS = ± 20 Vdc, V DS = 0 Vdc)
I GSS
?
?
± 100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
?
1.6
?6
2.0
?
Vdc
mV ° C
Static Drain?to?Source On?Resistance (Note 2)
R DS(on)
m W
(V GS = 5.0 Vdc, I D = 37.5 Adc)
Static Drain?to?Source On Resistance (Note 2)
(V GS = 10 Vdc, I D = 75 Adc)
(V GS = 10 Vdc, I D = 37.5 Adc, T J = 125 ° C)
V DS(on)
?
?
?
6.5
0.52
0.35
8.0
0.68
0.50
Vdc
Forward Transconductance (Notes 2 & 4)
(V DS = 3 Vdc, I D = 20 Adc)
g FS
?
58
?
m W
DYNAMIC CHARACTERISTICS (Note 4)
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
4398
1160
317
5635
1894
430
pF
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn?On Delay Time
Rise Time
Turn?Off Delay Time
Fall Time
Gate Charge
(V GS = 5.0 Vdc,
V DD = 20 Vdc, I D = 75 Adc,
R G = 4.7 W ) (Note 2)
(V GS = 5.0 Vdc,
I D = 75 Adc,
V DS = 24 Vdc) (Note 2)
t d(on)
t r
t d(off)
t f
Q T
Q 1
?
?
?
?
?
?
16
130
65
105
57
11
30
200
110
175
75
15
ns
nC
Q 2
?
34
50
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
(I S = 75 Adc, V GS = 0 Vdc)
(I S = 75 Adc, V GS = 0 Vdc, T J = 125 ° C)
V SD
?
?
1.19
1.09
1.25
?
Vdc
(Note 2)
Reverse Recovery Time
(Note 4)
Reverse Recovery Stored
Charge (Note 4)
(I S = 75 Adc, V GS = 0 Vdc
dl S /dt = 100 A/ m s) (Note 2)
t rr
t a
t b
Q RR
?
?
?
?
37
20
17
0.023
?
?
?
?
ns
m C
2. Pulse Test: Pulse Width v 300 m S, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
4. From characterization test data.
http://onsemi.com
3
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